FTS1012 no.7004-1/4 features ? low on-resistance. ? 4.0v drive. ? mounting height 1.1mm. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7004 FTS1012 package dimensions unit : mm 2147a [FTS1012] 71001 ts im ta-2944 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. p-channel silicon mosfet load switching applications specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 6 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --32 a allowable power dissipation p d mounted on a ceramic board (1000mm 2 5 0.8mm) 1.3 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.0 --2.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--6a 8.7 12 s marking : s1012 continued on next page. 1 : drain 2 : source 3 : source 4 : gate 5 : drain 6 : source 7 : source 8 : drain sanyo : tssop8 6.4 3.0 0.425 0.65 4.5 0.95 (0.95) 0.5 0.125 85 14 0.25 1.0 0.1
FTS1012 no.7004-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit r ds (on) 1 i d =--6a, v gs =--10v 21 28 m w static drain-to-source on-state resistance r ds (on) 2 i d =--4a, v gs =--4.5v 33 47 m w r ds (on) 3 i d =--4a, v gs =--4v 37 52 m w input capacitance ciss v ds =--10v, f=1mhz 1700 pf output capacitance coss v ds =--10v, f=1mhz 380 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 240 pf turn-on delay time t d (on) see specified test circuit 15 ns rise time t r see specified test circuit 130 ns turn-off delay time t d (off) see specified test circuit 110 ns fall time t f see specified test circuit 85 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--6a 32 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--6a 4.5 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--6a 5 nc diode forward voltage v sd i s =--6a, v gs =0 --0.79 --1.5 v switching time test circuit pw=10 s d.c. 1% 0v --10v v in p. g 50 g s i d = --6a r l =2.5 v dd = --15v v out FTS1012 v in d --10 -- 9 -- 8 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 i d -- v ds v gs = --2.5v --3.0v --3.5v --4.0v --6.0v --10.0v --4.5v 0 --12 --10 -- 8 -- 6 -- 4 -- 2 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.5 --3.0 i d -- v gs v ds = --10v ta=75 c --25 c 80 70 60 50 40 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 r ds (on) -- v gs ta=25 c i d = --4a --6a 0 r ds (on) -- ta 80 70 50 60 40 30 20 10 --60 --40 --20 0 20 40 60 80 100 120 160 140 i d = --4a, v gs = --4.5v i d = --4a, v gs = --4.0v i d = --6a, v gs = --10.0v it01577 it01578 it01579 it01580 25 c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v ambient temperature, ta -- c gate-to-source voltage, v gs -- v drain current, i d -- a
FTS1012 no.7004-3/4 --0.1 23 57 2 3 57 2 --1.0 --10 10 1000 100 7 5 3 2 7 5 3 2 sw time -- i d t d (on) v dd = --15v v gs = --10v a s o --0.1 23 57 23 57 7 --1.0 --10 23 5 7 23 5 --100 --10 --1.0 --0.1 --100 7 5 3 2 7 5 3 2 --0.01 --0.01 7 5 3 2 7 5 3 2 i dp = --32a i d = --6a <10 s 100 s 1ms 10ms 100ms t r t d (off) t f it01585 it03274 --10 -- 9 -- 8 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 0 5 10 15 20 30 25 35 v gs -- qg v ds = --10v i d = --6a 10000 7 5 3 2 7 5 3 2 1000 100 0 --5 --10 --15 --20 --25 --30 ciss, coss, crss -- v ds ciss coss crss f=1mhz it01583 it01584 -25 c ta=75 c 25 c ta= --25 c 25 c 75 c v ds = --10v 100 7 5 3 2 7 5 3 2 7 5 3 2 10 1.0 0.1 --0.1 23 57 23 57 2 ? y fs ? -- i d --1.0 --10 --100 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 --10 --1.0 --0.1 --0.01 --0.001 0 --0.2 --0.4 --0.6 --0.8 --1.0 i f -- v sd --1.2 v gs =0 it01581 it01582 operation in this area is limited by r ds (on). 0 0 20 40 0.5 1.0 1.5 1.3 60 80 100 120 140 160 p d -- ta it03275 dc operation(ta=25 c) ciss, coss, crss -- pf ta=25 c single pulse mounted on a ceramic board(1000mm 2 5 0.8mm) mounted on a ceramic board(1000mm 2 5 0.8mm) total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? yfs ? -- s diode forward voltage, v sd -- v forward current, i f -- a ambient temperature, ta -- c allowable power dissipation, p d -- w
FTS1012 no.7004-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 2001. specifications and information herein are subject to change without notice. ps
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